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Journal: Appl. Sci., 2021
Volume: 11
Number: 12075
Article:
Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling
Authors:
by
Jee-Hun Jeong, Ogyun Seok and Ho-Jun Lee
Link:
https://www.mdpi.com/2076-3417/11/24/12075
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