Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics
Round 1
Reviewer 1 Report
The authors must carry out a bibliographic review of GaN logic circuits state-of-the-art results.
What is the static power dissipation in the AlGaN/GaN MIS-HEMT comparator implemented?
Information about the propagation should be useful to complement the dynamic test done.
More discussions about the reasons of high frequency limit can improve the paper.
Author Response
Dear Reviewer,
Thanks for your constructive comments.
Please see the attachment for the point-by-point response to your comments.
Best Regards,
Fan Li
Author Response File: 
Author Response.pdf
Reviewer 2 Report
In the manuscript, the authors presented the interesting research on AlGaN/GaN MIS-HEMTs-based comparators. I would recommend this paper for publication if the following comments could be properly addressed.
1/ Please show the actual top-view and interconnection of the fabricated comparator.
2/ How are the LG, LDS, LGS?
3/ How are Ion/Ioff ratio, electron mobilities, contact resistance of each HEMT?
Author Response
Dear Reviewer,
Please see the attachment for the point-by-point reply to your constructive comments.
Thanks,
Fan Li
Author Response File: Author Response.pdf
