Pan, S.; Sun, C.; Zhou, Y.; Chen, W.; Zhang, R.; Zheng, Y.
Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K. Appl. Sci. 2020, 10, 444.
https://doi.org/10.3390/app10020444
AMA Style
Pan S, Sun C, Zhou Y, Chen W, Zhang R, Zheng Y.
Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K. Applied Sciences. 2020; 10(2):444.
https://doi.org/10.3390/app10020444
Chicago/Turabian Style
Pan, Sai, Chenhong Sun, Yugang Zhou, Wei Chen, Rong Zhang, and Youdou Zheng.
2020. "Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K" Applied Sciences 10, no. 2: 444.
https://doi.org/10.3390/app10020444
APA Style
Pan, S., Sun, C., Zhou, Y., Chen, W., Zhang, R., & Zheng, Y.
(2020). Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K. Applied Sciences, 10(2), 444.
https://doi.org/10.3390/app10020444