Atamuratov, A.E.; Khalilloev, M.M.; Yusupov, A.; GarcÃa-Loureiro, A.J.; Chedjou, J.C.; Kyandoghere, K.
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Appl. Sci. 2020, 10, 5327.
https://doi.org/10.3390/app10155327
AMA Style
Atamuratov AE, Khalilloev MM, Yusupov A, GarcÃa-Loureiro AJ, Chedjou JC, Kyandoghere K.
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Applied Sciences. 2020; 10(15):5327.
https://doi.org/10.3390/app10155327
Chicago/Turabian Style
Atamuratov, Atabek E., Mahkam M. Khalilloev, Ahmed Yusupov, A. J. GarcÃa-Loureiro, Jean Chamberlain Chedjou, and Kyamakya Kyandoghere.
2020. "Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET" Applied Sciences 10, no. 15: 5327.
https://doi.org/10.3390/app10155327
APA Style
Atamuratov, A. E., Khalilloev, M. M., Yusupov, A., GarcÃa-Loureiro, A. J., Chedjou, J. C., & Kyandoghere, K.
(2020). Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Applied Sciences, 10(15), 5327.
https://doi.org/10.3390/app10155327