Xie, H.; Liu, H.; Wang, S.; Chen, S.; Han, T.; Li, W.
Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate. Appl. Sci. 2020, 10, 126.
https://doi.org/10.3390/app10010126
AMA Style
Xie H, Liu H, Wang S, Chen S, Han T, Li W.
Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate. Applied Sciences. 2020; 10(1):126.
https://doi.org/10.3390/app10010126
Chicago/Turabian Style
Xie, Haiwu, Hongxia Liu, Shulong Wang, Shupeng Chen, Tao Han, and Wei Li.
2020. "Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate" Applied Sciences 10, no. 1: 126.
https://doi.org/10.3390/app10010126
APA Style
Xie, H., Liu, H., Wang, S., Chen, S., Han, T., & Li, W.
(2020). Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate. Applied Sciences, 10(1), 126.
https://doi.org/10.3390/app10010126