Next Article in Journal
Influences of Cooling Conditions on the Liquation Cracking in Laser Metal Deposition of a Directionally Solidified Superalloy
Previous Article in Journal
Extraction of Lead and Zinc from a Rotary Kiln Oxidizing Roasting Cinder
Article

Electrical and Mechanical Analysis of Different TSV Geometries

1
School of Engineering, Faculty of Science and Engineering, University of Wolverhampton, Wolverhampton TF2 9NN, UK
2
Department of Materials Science and Engineering University of Seoul, Seoul 130-743, Korea
*
Author to whom correspondence should be addressed.
Metals 2020, 10(4), 467; https://doi.org/10.3390/met10040467
Received: 21 February 2020 / Revised: 27 March 2020 / Accepted: 31 March 2020 / Published: 2 April 2020
Through-silicon via (TSV) is an important component for implementing 3-D packages and 3-D integrated circuits as the TSV technology allows stacked silicon chips to interconnect through direct contact to help facilitate high-speed signal processing. By facilitating the stacking of silicon chips, the TSV technology also helps to meet the increasing demand for high density and high performance miniaturized electronic products. Our review of the literature shows that very few studies have reported on the impact of TSV bump geometry on the electrical and mechanical characteristics of the TSV. This paper reports on the investigation of different TSV geometries with the focus on identifying the ideal shapes for improved electrical signal transmission as well as for improved mechanical reliability. The cylindrical, quadrangular (square), elliptical, and triangular shapes were investigated in our study and our results showed that the quadrangular shape had the best electrical performance due to good characteristic impedance. Our results also showed that the quadrangular and cylindrical shapes provided improved mechanical reliability as these two shapes lead to high Cu protrusion of TSV after the annealing process. View Full-Text
Keywords: TSV; electrical analysis; mechanical analysis; simulation TSV; electrical analysis; mechanical analysis; simulation
Show Figures

Graphical abstract

MDPI and ACS Style

Jeong, I.H.; Eslami Majd, A.; Jung, J.P.; Ekere, N.N. Electrical and Mechanical Analysis of Different TSV Geometries. Metals 2020, 10, 467. https://doi.org/10.3390/met10040467

AMA Style

Jeong IH, Eslami Majd A, Jung JP, Ekere NN. Electrical and Mechanical Analysis of Different TSV Geometries. Metals. 2020; 10(4):467. https://doi.org/10.3390/met10040467

Chicago/Turabian Style

Jeong, Il H., Alireza Eslami Majd, Jae P. Jung, and Nduka N. Ekere. 2020. "Electrical and Mechanical Analysis of Different TSV Geometries" Metals 10, no. 4: 467. https://doi.org/10.3390/met10040467

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop