Article Versions Notes

Zhan J, Shang C, Niu M, Luo J, Gao S, Wu Z, Niu S, Xu Y, Zhang X, Li Z, et al. An Acid-Cleavable Lamellar Block Copolymer for Sub-30-nm Line Spacing Patterning via Graphoepitaxial Directed Self-Assembly and Direct Wet Etching. Polymers. 2025; 17(18):2435. https://doi.org/10.3390/polym17182435

Zhan, Jianghao, Caiwei Shang, Muqiao Niu, Jiacheng Luo, Shengguang Gao, Zhiyong Wu, Shengru Niu, Yiming Xu, Xingmiao Zhang, Zili Li, and et al. 2025. "An Acid-Cleavable Lamellar Block Copolymer for Sub-30-nm Line Spacing Patterning via Graphoepitaxial Directed Self-Assembly and Direct Wet Etching" Polymers 17, no. 18: 2435. https://doi.org/10.3390/polym17182435

Zhan, J., Shang, C., Niu, M., Luo, J., Gao, S., Wu, Z., Niu, S., Xu, Y., Zhang, X., Li, Z., & Xiong, S. (2025). An Acid-Cleavable Lamellar Block Copolymer for Sub-30-nm Line Spacing Patterning via Graphoepitaxial Directed Self-Assembly and Direct Wet Etching. Polymers, 17(18), 2435. https://doi.org/10.3390/polym17182435