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Open AccessArticle

CuZnSn(SxSe1-x)4 Solar Cell Prepared by the Sol-Gel Method Following a Modified Three-Step Selenization Process

1
School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
2
Science and Technology on Power Sources Laboratory, Tianjin Institute of Power Sources, Tianjin 300130, China
3
Hebei Key Laboratory of Boron Nitride Micro and Nano Materials, Hebei University of Technology, Tianjin 300130, China
4
School of Chemical Engineering, Dalian University of Technology, Dalian 116024, China
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School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300191, China
6
School of Physical Science and Technology, Southwest University, Chongqing 400715, China
*
Authors to whom correspondence should be addressed.
Crystals 2019, 9(9), 474; https://doi.org/10.3390/cryst9090474
Received: 19 August 2019 / Revised: 3 September 2019 / Accepted: 6 September 2019 / Published: 11 September 2019
(This article belongs to the Special Issue Advances in Thin Film Solar Cells)
In current work, Cu2ZnSn(S,Se)4 thin films have been prepared by the sol-gel method based on dimethyl sulfoxide solution followed by a modified three-step selenization process. The key process of this method is to divide the Se evaporation and annealing into two different stages: employ a thermal cracking Se source in the Se evaporation stage and an above-atmospheric pressure in the annealing process. The morphological, structural, elemental distributional, and photovoltaic properties of Cu2ZnSn(S,Se)4 thin films prepared with the three-step selenization process were systematically investigated. It was found that through this modified selenization process, the formations of secondary phases (ZnSe, CuSnSe3) and a fine-grain bottom layer, which usually exists in the traditional one-step selenization process, were effectively suppressed. These improvements could further reduce the carrier recombination and improve the solar cell performance. The best solar cell is obtained with a short-circuit current density of 28.16 mA/cm2, open-circuit voltage of 404.91 mV, fill factor of 62.91%, and a power conversion efficiency of 7.17% under air mass 1.5 (100 mW/cm2) illumination. View Full-Text
Keywords: CZTSSe solar cell; sol-gel method; selenization; thermal cracking Se; above-atmospheric pressure; secondary phases CZTSSe solar cell; sol-gel method; selenization; thermal cracking Se; above-atmospheric pressure; secondary phases
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Shen, X.; Tang, C.; Zhang, C.; Li, G.; Zhao, Y.; Li, W.; Chen, G.; Yang, T. CuZnSn(SxSe1-x)4 Solar Cell Prepared by the Sol-Gel Method Following a Modified Three-Step Selenization Process. Crystals 2019, 9, 474.

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