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Open AccessArticle

All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots

by 1,2,* and 2,3,4,*
1
Department of Physics, Triveni Devi Bhalotia College, Raniganj, West Bengal 713383, India
2
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
3
Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-0814, Japan
4
Department of Physics, Chuo University, 1-13-27 Kasuga, Bunkyo, Tokyo 112-8551, Japan
*
Authors to whom correspondence should be addressed.
Crystals 2019, 9(8), 385; https://doi.org/10.3390/cryst9080385
Received: 25 June 2019 / Revised: 15 July 2019 / Accepted: 25 July 2019 / Published: 26 July 2019
We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO3/Al multilayer, which was prepared by a facile solution process. The QLED shows a red electroluminescence, an external quantum efficiency (EQE) of 0.25%, and luminance of 1400 cd/m2. The device performance stability has been investigated when the device faces different humidity conditions without any encapsulation. The advantage of using all inorganic layers is reflected in stable EQE even after prolonged exposure to harsh conditions. View Full-Text
Keywords: light emitting diode; quantum dots; silicon; solution-process; all-inorganic device light emitting diode; quantum dots; silicon; solution-process; all-inorganic device
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MDPI and ACS Style

Ghosh, B.; Shirahata, N. All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots. Crystals 2019, 9, 385.

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