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Open AccessArticle

All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots

1,2,* and 2,3,4,*
Department of Physics, Triveni Devi Bhalotia College, Raniganj, West Bengal 713383, India
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-0814, Japan
Department of Physics, Chuo University, 1-13-27 Kasuga, Bunkyo, Tokyo 112-8551, Japan
Authors to whom correspondence should be addressed.
Crystals 2019, 9(8), 385;
Received: 25 June 2019 / Revised: 15 July 2019 / Accepted: 25 July 2019 / Published: 26 July 2019
PDF [1381 KB, uploaded 5 August 2019]


We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO3/Al multilayer, which was prepared by a facile solution process. The QLED shows a red electroluminescence, an external quantum efficiency (EQE) of 0.25%, and luminance of 1400 cd/m2. The device performance stability has been investigated when the device faces different humidity conditions without any encapsulation. The advantage of using all inorganic layers is reflected in stable EQE even after prolonged exposure to harsh conditions. View Full-Text
Keywords: light emitting diode; quantum dots; silicon; solution-process; all-inorganic device light emitting diode; quantum dots; silicon; solution-process; all-inorganic device

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Ghosh, B.; Shirahata, N. All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots. Crystals 2019, 9, 385.

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