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Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

Department of Nuclear Science and Technology, School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049, China
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Crystals 2019, 9(5), 263; https://doi.org/10.3390/cryst9050263
Received: 24 April 2019 / Revised: 13 May 2019 / Accepted: 15 May 2019 / Published: 20 May 2019
(This article belongs to the Special Issue Crystals, Films and Nanocomposite Scintillators)
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Abstract

As a wide band-gap and direct transition semiconductor material, ZnO has good scintillation performance and strong radiation resistance, but it also has a serious self-absorption phenomenon that affects its light output. After being doped with Ga, it can be used for the scintillator of ultra-fast scintillating detectors to detect X-ray, gamma, neutron, and charged particles with extremely fast response and high light output. Firstly, the basic properties, defects, and scintillation mechanism of ZnO crystals are introduced. Thereafter, magnetron sputtering, one of the most attractive production methods for producing ZnO:Ga film, is introduced including the principle of magnetron sputtering and its technical parameters’ influence on the performance of ZnO:Ga. Finally, ZnO:Ga film’s application research status is presented as a scintillation material in the field of radiation detection, and it is concluded that some problems need to be urgently solved for its wider application. View Full-Text
Keywords: nuclear detection technology and nuclear electronics; ZnO:Ga scintillation material; magnetron sputtering; production of ZnO:Ga film; ultra-fast scintillating detector nuclear detection technology and nuclear electronics; ZnO:Ga scintillation material; magnetron sputtering; production of ZnO:Ga film; ultra-fast scintillating detector
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Wen, X.; Zhang, Q.; Shao, Z. Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection. Crystals 2019, 9, 263.

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