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Open AccessArticle

Single-Crystal Growth of Metallic Rare-Earth Tetraborides by the Floating-Zone Technique

Department of Physics, University of Warwick, Coventry CV4 7AL, UK
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Authors to whom correspondence should be addressed.
Current address: National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Crystals 2019, 9(4), 211; https://doi.org/10.3390/cryst9040211
Received: 27 March 2019 / Revised: 11 April 2019 / Accepted: 12 April 2019 / Published: 19 April 2019
(This article belongs to the Special Issue Optical Floating Zone and Crystals Grown by this Method)
The rare-earth tetraborides are exceptional in that the rare-earth ions are topologically equivalent to the frustrated Shastry-Sutherland lattice. In this paper, we report the growth of large single crystals of RB 4 (where R = Nd, Gd → Tm, and Y) by the floating-zone method, using a high-power xenon arc-lamp furnace. The crystal boules have been characterized and tested for their quality using X-ray diffraction techniques and temperature- and field-dependent magnetization and AC resistivity measurements. View Full-Text
Keywords: crystal growth; floating-zone technique; rare-earth tetraborides; Shastry-Sutherland lattice; frustrated magnet crystal growth; floating-zone technique; rare-earth tetraborides; Shastry-Sutherland lattice; frustrated magnet
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MDPI and ACS Style

Brunt, D.; Ciomaga Hatnean, M.; Petrenko, O.A.; Lees, M.R.; Balakrishnan, G. Single-Crystal Growth of Metallic Rare-Earth Tetraborides by the Floating-Zone Technique. Crystals 2019, 9, 211. https://doi.org/10.3390/cryst9040211

AMA Style

Brunt D, Ciomaga Hatnean M, Petrenko OA, Lees MR, Balakrishnan G. Single-Crystal Growth of Metallic Rare-Earth Tetraborides by the Floating-Zone Technique. Crystals. 2019; 9(4):211. https://doi.org/10.3390/cryst9040211

Chicago/Turabian Style

Brunt, Daniel; Ciomaga Hatnean, Monica; Petrenko, Oleg A.; Lees, Martin R.; Balakrishnan, Geetha. 2019. "Single-Crystal Growth of Metallic Rare-Earth Tetraborides by the Floating-Zone Technique" Crystals 9, no. 4: 211. https://doi.org/10.3390/cryst9040211

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