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Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

1
Institute of Laser Engineering, Beijing University of technology, Beijing 100124, China
2
College of Microelectronics, Beijing University of technology, Beijing 100124, China
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(12), 671; https://doi.org/10.3390/cryst9120671
Received: 17 November 2019 / Revised: 4 December 2019 / Accepted: 10 December 2019 / Published: 12 December 2019
In this paper, effects of He+ and H+ co-implantation with high implantation energy on surface blisters and craters at different annealing conditions are systematically investigated. Surface morphology as well as defect microstructure are observed and analyzed by various approaches, such as scanning electron microscopy (SEM), optical microscopy (OM), atomic force microscopy (AFM), and Raman spectroscopy. It is found that after 500 °C annealing and above for 1 h, surface blisters and exfoliation are observed for Si and SiO2-on-Si wafers except for the samples implanted with only He+ ions. AFM images reveal that the heights of blisters in Si and SiO2-on-Si wafers are 432 nm and 397 nm respectively and the thickness of transfer layer is at the depth of about 1.4 μm, which is consistent with the projected range of He+ and H+ ions. Raman spectroscopy demonstrates that higher annealing temperature can lead to a stronger intensity of the VH2 peak. Under the same implantation parameters, surface morphology of Si and SiO2-on-Si wafers is different after annealing process. This phenomenon is discussed in detail. View Full-Text
Keywords: He+ and H+ co-implantation; surface morphology; blisters; exfoliation He+ and H+ co-implantation; surface morphology; blisters; exfoliation
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Huang, R.; Lan, T.; Li, C.; Li, J.; Wang, Z. Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers. Crystals 2019, 9, 671.

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