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Open AccessArticle

Contemporary Apparatus for Single Crystals Growth of Oxide Compounds and Metals by Optical Floating Zone (FZ)

Moscow power Engineering Institute, National Research University, 111250 Moscow, Russia
Crystals 2019, 9(10), 487; https://doi.org/10.3390/cryst9100487
Received: 27 July 2019 / Revised: 17 August 2019 / Accepted: 10 September 2019 / Published: 20 September 2019
(This article belongs to the Special Issue Optical Floating Zone and Crystals Grown by this Method)
A contemporary apparatus with radiation (light) heating for growth of single crystals of refractory oxides and metals is described. To reduce the dissociation or evaporation of the melt or crystal components, the growth process was carried out in oxygen or an alternative gas at pressures up to 100 bar. The annealing system applied directly in the growth process at 1650 °C under O2 pressure and at temperatures up to 2500 °C under protective gas flow, allows the obtaining of large and perfect single crystals. Many single crystals of oxide materials, including incongruently melting substances, such as Y3Fe5O12, Gd3Fe5O12, BaFe12O19, SrFe12O19, BaFe12-x AlxO19, and many others have been grown, and much more could be grown. View Full-Text
Keywords: crystal growth; floating zone melting; ellipsoidal mirror; high gas pressure; crystal annealing furnace; crystal growth interface; xenon arc lamp crystal growth; floating zone melting; ellipsoidal mirror; high gas pressure; crystal annealing furnace; crystal growth interface; xenon arc lamp
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M. Balbashov, A. Contemporary Apparatus for Single Crystals Growth of Oxide Compounds and Metals by Optical Floating Zone (FZ). Crystals 2019, 9, 487.

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