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Crystals 2017, 7(8), 232;

Ferroelectricity in Simple Binary Crystals

Department of Physics, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan
Author to whom correspondence should be addressed.
Received: 28 April 2017 / Revised: 22 May 2017 / Accepted: 23 May 2017 / Published: 28 July 2017
(This article belongs to the Special Issue Crystal Structure of Electroceramics)
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The origin of ferroelectricity in doped binary crystals, Pb1−xGexTe, Cd1−xZnxTe, Zn1−xLixO, and Hf1−xZrxO2 is discussed, while no binary ferroelectrics have been reported except for two crystals, HCl and HBr. The ferroelectricity is induced only in doped crystals, which shows an importance of electronic modification in chemical bonds by dopants. The phenomenological and microscopic treatments are given for the appearance of ferroelectric activity. The discovery of ferroelectricity in binary crystals such as ZnO and HfO2 is of high interest in fundamental science and also in application for complementary metal–oxide semiconductor (CMOS) technology. View Full-Text
Keywords: ferroelectric; binary crystal; ZnO; HfO2; mixed bond ferroelectric; binary crystal; ZnO; HfO2; mixed bond

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Onodera, A.; Takesada, M. Ferroelectricity in Simple Binary Crystals. Crystals 2017, 7, 232.

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