Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.
This is an open access article distributed under the Creative Commons Attribution License
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited