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Crystals 2016, 6(7), 74;

Electronic and Optical Properties of Dislocations in Silicon

1,†,* and 2,†
Max Planck Institute of Microstructure Physics, Halle 06130, Germany
Department of Circuit Design, Brandenburg University of Technology Cottbus-Senftenberg, Cottbus 03046, Germany
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Ronald W. Armstrong
Received: 10 May 2016 / Revised: 22 June 2016 / Accepted: 24 June 2016 / Published: 30 June 2016
(This article belongs to the Special Issue Crystal Dislocations)


Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10% or more—causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity. View Full-Text
Keywords: silicon; dislocation; electronic properties; carrier confinement; strain silicon; dislocation; electronic properties; carrier confinement; strain

Figure 1

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Reiche, M.; Kittler, M. Electronic and Optical Properties of Dislocations in Silicon. Crystals 2016, 6, 74.

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