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Crystals 2016, 6(5), 53;

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
Author to whom correspondence should be addressed.
Academic Editor: Helmut Cölfen
Received: 19 February 2016 / Revised: 11 April 2016 / Accepted: 28 April 2016 / Published: 12 May 2016


This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices. View Full-Text
Keywords: graphene; epitaxial; SiC; sublimation graphene; epitaxial; SiC; sublimation

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Yazdi, G.R.; Iakimov, T.; Yakimova, R. Epitaxial Graphene on SiC: A Review of Growth and Characterization. Crystals 2016, 6, 53.

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