Kumar, M.; Xu, L.; Labau, T.; Biscarrat, J.; Torrengo, S.; Charles, M.; Lecouvey, C.; Olivier, A.; Zgheib, J.; Escoffier, R.;
et al. Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics. Crystals 2025, 15, 56.
https://doi.org/10.3390/cryst15010056
AMA Style
Kumar M, Xu L, Labau T, Biscarrat J, Torrengo S, Charles M, Lecouvey C, Olivier A, Zgheib J, Escoffier R,
et al. Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics. Crystals. 2025; 15(1):56.
https://doi.org/10.3390/cryst15010056
Chicago/Turabian Style
Kumar, Mohit, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier,
and et al. 2025. "Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics" Crystals 15, no. 1: 56.
https://doi.org/10.3390/cryst15010056
APA Style
Kumar, M., Xu, L., Labau, T., Biscarrat, J., Torrengo, S., Charles, M., Lecouvey, C., Olivier, A., Zgheib, J., Escoffier, R., & Buckley, J.
(2025). Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics. Crystals, 15(1), 56.
https://doi.org/10.3390/cryst15010056
