Wangila, E.; Gunder, C.; Lytvyn, P.M.; Zamani-Alavijeh, M.; Maia de Oliveira, F.; Kryvyi, S.; Stanchu, H.; Sheibani, A.; Mazur, Y.I.; Yu, S.-Q.;
et al. The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire. Crystals 2024, 14, 414.
https://doi.org/10.3390/cryst14050414
AMA Style
Wangila E, Gunder C, Lytvyn PM, Zamani-Alavijeh M, Maia de Oliveira F, Kryvyi S, Stanchu H, Sheibani A, Mazur YI, Yu S-Q,
et al. The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire. Crystals. 2024; 14(5):414.
https://doi.org/10.3390/cryst14050414
Chicago/Turabian Style
Wangila, Emmanuel, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu,
and et al. 2024. "The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire" Crystals 14, no. 5: 414.
https://doi.org/10.3390/cryst14050414
APA Style
Wangila, E., Gunder, C., Lytvyn, P. M., Zamani-Alavijeh, M., Maia de Oliveira, F., Kryvyi, S., Stanchu, H., Sheibani, A., Mazur, Y. I., Yu, S.-Q., & Salamo, G.
(2024). The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire. Crystals, 14(5), 414.
https://doi.org/10.3390/cryst14050414