Article Versions Notes

Zhang Y, Ding G, Wang F, Yu P, Feng Q, Yu C, He J, Wang X, Xu W, He M, et al. Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology. Crystals. 2023; 13(5):815. https://doi.org/10.3390/cryst13050815

Zhang, Yujian, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, and et al. 2023. "Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology" Crystals 13, no. 5: 815. https://doi.org/10.3390/cryst13050815

Zhang, Y., Ding, G., Wang, F., Yu, P., Feng, Q., Yu, C., He, J., Wang, X., Xu, W., He, M., Wang, Y., Chen, W., Jia, H., & Chen, H. (2023). Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology. Crystals, 13(5), 815. https://doi.org/10.3390/cryst13050815