Cheng, H.; Li, W.; Wang, P.; Chen, J.; Wang, Q.; Yu, H.
A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD). Crystals 2023, 13, 650.
https://doi.org/10.3390/cryst13040650
AMA Style
Cheng H, Li W, Wang P, Chen J, Wang Q, Yu H.
A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD). Crystals. 2023; 13(4):650.
https://doi.org/10.3390/cryst13040650
Chicago/Turabian Style
Cheng, Hongyu, Wenmao Li, Peiran Wang, Jianguo Chen, Qing Wang, and Hongyu Yu.
2023. "A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)" Crystals 13, no. 4: 650.
https://doi.org/10.3390/cryst13040650
APA Style
Cheng, H., Li, W., Wang, P., Chen, J., Wang, Q., & Yu, H.
(2023). A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD). Crystals, 13(4), 650.
https://doi.org/10.3390/cryst13040650