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Journal: Crystals, 2023
Volume: 13
Number: 193
193
Article: Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD
Authors: by Zhuorui Tang, Lin Gu, Hongping Ma, Kefeng Dai, Qian Luo, Nan Zhang, Jiyu Huang and Jiajie Fan
Link: https://www.mdpi.com/2073-4352/13/2/193

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