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Journal: Crystals, 2023
Volume: 13
Number: 1456

Article: Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)
Authors: by Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen, Md Tahmidul Alam, Surjava Sanyal, Ruixin Bai, Guangying Wang, Chirag Gupta and Shubhra S. Pasayat
Link: https://www.mdpi.com/2073-4352/13/10/1456

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