Article Versions Notes

Mukhopadhyay S, Liu C, Chen J, Tahmidul Alam M, Sanyal S, Bai R, Wang G, Gupta C, Pasayat SS. Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□). Crystals. 2023; 13(10):1456. https://doi.org/10.3390/cryst13101456

Mukhopadhyay, Swarnav, Cheng Liu, Jiahao Chen, Md Tahmidul Alam, Surjava Sanyal, Ruixin Bai, Guangying Wang, Chirag Gupta, and Shubhra S. Pasayat. 2023. "Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)" Crystals 13, no. 10: 1456. https://doi.org/10.3390/cryst13101456

Mukhopadhyay, S., Liu, C., Chen, J., Tahmidul Alam, M., Sanyal, S., Bai, R., Wang, G., Gupta, C., & Pasayat, S. S. (2023). Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□). Crystals, 13(10), 1456. https://doi.org/10.3390/cryst13101456