Mukhopadhyay, S.;                     Liu, C.;                     Chen, J.;                     Tahmidul Alam, M.;                     Sanyal, S.;                     Bai, R.;                     Wang, G.;                     Gupta, C.;                     Pasayat, S.S.    
        Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□). Crystals 2023, 13, 1456.
    https://doi.org/10.3390/cryst13101456
    AMA Style
    
                                Mukhopadhyay S,                                 Liu C,                                 Chen J,                                 Tahmidul Alam M,                                 Sanyal S,                                 Bai R,                                 Wang G,                                 Gupta C,                                 Pasayat SS.        
                Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□). Crystals. 2023; 13(10):1456.
        https://doi.org/10.3390/cryst13101456
    
    Chicago/Turabian Style
    
                                Mukhopadhyay, Swarnav,                                 Cheng Liu,                                 Jiahao Chen,                                 Md Tahmidul Alam,                                 Surjava Sanyal,                                 Ruixin Bai,                                 Guangying Wang,                                 Chirag Gupta,                                 and Shubhra S. Pasayat.        
                2023. "Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)" Crystals 13, no. 10: 1456.
        https://doi.org/10.3390/cryst13101456
    
    APA Style
    
                                Mukhopadhyay, S.,                                 Liu, C.,                                 Chen, J.,                                 Tahmidul Alam, M.,                                 Sanyal, S.,                                 Bai, R.,                                 Wang, G.,                                 Gupta, C.,                                 & Pasayat, S. S.        
        
        (2023). Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□). Crystals, 13(10), 1456.
        https://doi.org/10.3390/cryst13101456