Yusuf, Y.; Samsudin, M.E.A.; Taib, M.I.M.; Ahmad, M.A.; Mohamed, M.F.P.; Kawarada, H.; Falina, S.; Zainal, N.; Syamsul, M.
Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT. Crystals 2023, 13, 90.
https://doi.org/10.3390/cryst13010090
AMA Style
Yusuf Y, Samsudin MEA, Taib MIM, Ahmad MA, Mohamed MFP, Kawarada H, Falina S, Zainal N, Syamsul M.
Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT. Crystals. 2023; 13(1):90.
https://doi.org/10.3390/cryst13010090
Chicago/Turabian Style
Yusuf, Yusnizam, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, and Mohd Syamsul.
2023. "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT" Crystals 13, no. 1: 90.
https://doi.org/10.3390/cryst13010090
APA Style
Yusuf, Y., Samsudin, M. E. A., Taib, M. I. M., Ahmad, M. A., Mohamed, M. F. P., Kawarada, H., Falina, S., Zainal, N., & Syamsul, M.
(2023). Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT. Crystals, 13(1), 90.
https://doi.org/10.3390/cryst13010090