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Journal: Crystals, 2022
Volume: 12
Number: 1085

Article: Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices
Authors: by Tadao Hashimoto, Edward R. Letts and Daryl Key
Link: https://www.mdpi.com/2073-4352/12/8/1085

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