Wang, B.; Zeng, Y.; Song, Y.; Wang, Y.; Liang, L.; Qin, L.; Zhang, J.; Jia, P.; Lei, Y.; Qiu, C.;
et al. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review. Crystals 2022, 12, 1011.
https://doi.org/10.3390/cryst12071011
AMA Style
Wang B, Zeng Y, Song Y, Wang Y, Liang L, Qin L, Zhang J, Jia P, Lei Y, Qiu C,
et al. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review. Crystals. 2022; 12(7):1011.
https://doi.org/10.3390/cryst12071011
Chicago/Turabian Style
Wang, Bin, Yugang Zeng, Yue Song, Ye Wang, Lei Liang, Li Qin, Jianwei Zhang, Peng Jia, Yuxin Lei, Cheng Qiu,
and et al. 2022. "Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review" Crystals 12, no. 7: 1011.
https://doi.org/10.3390/cryst12071011
APA Style
Wang, B., Zeng, Y., Song, Y., Wang, Y., Liang, L., Qin, L., Zhang, J., Jia, P., Lei, Y., Qiu, C., Ning, Y., & Wang, L.
(2022). Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review. Crystals, 12(7), 1011.
https://doi.org/10.3390/cryst12071011