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Article

Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots

1
Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7 D, Arica 1000000, Chile
2
Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat 10100, Morocco
3
Renewable Energy and Advanced Materials Laboratory, International University of Rabat, Rabat 10100, Morocco
4
Laboratory of Engineering, Innovation and Management of Industrial Systems (LEIMIS), FST of Tangier, Abdelmalek Essaadi University, Tangier 90040, Morocco
5
CNR-Nanotec, Nanotechnology Institute, Via Monteroni, 73100 Lecce, Italy
6
LCP-A2MC, Université de Lorraine, F-57000 Metz, France
7
Centro Universitario de los Valles (CUValles), Universidad de Guadalajara, Carretera Guadalajara-Ameca Km. 45.5, Ameca 46600, Mexico
8
Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7 D, Arica 1000000, Chile
9
Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, Ben Guerir 43150, Morocco
*
Author to whom correspondence should be addressed.
Crystals 2022, 12(7), 1002; https://doi.org/10.3390/cryst12071002
Submission received: 26 May 2022 / Revised: 7 July 2022 / Accepted: 12 July 2022 / Published: 19 July 2022

Abstract

Photovoltaic cells, based on quantum dots implementation in the intrinsic region, are one of the most widely studied concepts nowadays to obtain a high solar conversion efficiency. The challenge in this third generation of solar cells is to find a good combination of materials that allows obtaining higher efficiency with low cost. In this study, we consider a juxtaposition of two kinds of quantum dots (dot/barrier) inside the I region of the PIN junction: the first combination of semiconductors includes the two configurations, PbTe/CdTe and PbSe/ZnTe, and the second combination is InN/GaN. Thus the intermediate band can be tailored by controlling the size of the dots and the inter-dot distances. The principal interest of this investigation is to determine the optimized parameters (the dot size and the inter-dot distance), leading to obtain a better solar cell efficiency. Intermediate bands, their positions, and their widths, are determined using 3D confined particles (electron and hole). Their energy levels are determined by solving the Schrödinger equation and solving the well-known dispersion relation in the Kronig–Penney model.
Keywords: intermediate band solar cells; quantum dots; power conversion efficiency intermediate band solar cells; quantum dots; power conversion efficiency

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MDPI and ACS Style

Pérez, L.M.; Aouami, A.E.; Feddi, K.; Tasco, V.; Abdellah, A.B.; Dujardin, F.; Courel, M.; Riquelme, J.A.; Laroze, D.; Feddi, E.M. Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots. Crystals 2022, 12, 1002. https://doi.org/10.3390/cryst12071002

AMA Style

Pérez LM, Aouami AE, Feddi K, Tasco V, Abdellah AB, Dujardin F, Courel M, Riquelme JA, Laroze D, Feddi EM. Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots. Crystals. 2022; 12(7):1002. https://doi.org/10.3390/cryst12071002

Chicago/Turabian Style

Pérez, Laura M., Asmae EL Aouami, Kawtar Feddi, Vittorianna Tasco, Abdellatif Ben Abdellah, Francis Dujardin, Maykel Courel, Javier A. Riquelme, David Laroze, and EL Mustapha Feddi. 2022. "Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots" Crystals 12, no. 7: 1002. https://doi.org/10.3390/cryst12071002

APA Style

Pérez, L. M., Aouami, A. E., Feddi, K., Tasco, V., Abdellah, A. B., Dujardin, F., Courel, M., Riquelme, J. A., Laroze, D., & Feddi, E. M. (2022). Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots. Crystals, 12(7), 1002. https://doi.org/10.3390/cryst12071002

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