Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization

Li, Biaomin; Xia, Shihong; Guo, Wei; Yang, Zhenhai; Zeng, Yuheng; Yuan, Zhizhong; Ye, Jichun

doi:10.3390/cryst12111601

Open AccessArticle

Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization

by

Biaomin Li

^1,2,

Shihong Xia

²,

Wei Guo

²,

Zhenhai Yang

^2,*,

Yuheng Zeng

²,

Zhizhong Yuan

^1,* and

Jichun Ye

^2,*

¹

School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China

²

Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo 315201, China

^*

Authors to whom correspondence should be addressed.

Crystals 2022, 12(11), 1601; https://doi.org/10.3390/cryst12111601

Submission received: 21 October 2022 / Revised: 3 November 2022 / Accepted: 7 November 2022 / Published: 10 November 2022

(This article belongs to the Special Issue Preparation and Characterization of Optoelectronic Functional Films)

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Abstract

Ultraviolet (UV) light-emitting diodes (LEDs), as one of the more promising optoelectronic devices, are intrinsically limited by poor light extraction efficiencies (LEEs). To unlock the full potential of UV-LEDs, we propose a simple and effective strategy to promote the LEEs of UV-LEDs by screening and tailoring suitable optical structures/designs through rigorous numerical simulations. The photonic crystals (PCs) and/or nano-patterned sapphire substrates (NPSSs) equipped with the nano-pillar, nano-cone, nano-oval, and their derivates, are particularly investigated. The simulated results show that individual PC with an average transmittance of 28% is more efficient than that of individual NPSS (24.8%). By coupling PC and NPSS structures, a higher LEE with an average transmittance approaching 29% is obtained, much higher than that of the flat one (23.6%). The involved mechanisms are clarified and confirm that the promotion of optical performance of the nanostructured devices should be attributed to the widened response angles (from 0 to 60°), rather than the enhanced transmittances in the small angles within 30°.

Keywords: nano-patterned sapphire substrates; photonic crystals; light extraction efficiencies; numerical simulations

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MDPI and ACS Style

Li, B.; Xia, S.; Guo, W.; Yang, Z.; Zeng, Y.; Yuan, Z.; Ye, J. Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization. Crystals 2022, 12, 1601. https://doi.org/10.3390/cryst12111601

AMA Style

Li B, Xia S, Guo W, Yang Z, Zeng Y, Yuan Z, Ye J. Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization. Crystals. 2022; 12(11):1601. https://doi.org/10.3390/cryst12111601

Chicago/Turabian Style

Li, Biaomin, Shihong Xia, Wei Guo, Zhenhai Yang, Yuheng Zeng, Zhizhong Yuan, and Jichun Ye. 2022. "Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization" Crystals 12, no. 11: 1601. https://doi.org/10.3390/cryst12111601

APA Style

Li, B., Xia, S., Guo, W., Yang, Z., Zeng, Y., Yuan, Z., & Ye, J. (2022). Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization. Crystals, 12(11), 1601. https://doi.org/10.3390/cryst12111601

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Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization

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