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Journal: Crystals, 2022
Volume: 12
Number: 1521

Article: Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment
Authors: by Siheng Chen, Peng Cui, Mingsheng Xu, Zhaojun Lin, Xiangang Xu, Yuping Zeng and Jisheng Han
Link: https://www.mdpi.com/2073-4352/12/11/1521

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