Next Article in Journal
Comparison of the Effect of the Amino Acids on Spontaneous Formation and Transformation of Calcium Phosphates
Next Article in Special Issue
Modern History of Organic Conductors: An Overview
Previous Article in Journal
Highly Dispersed and Stable Ni/SBA-15 Catalyst for Reverse Water-Gas Shift Reaction
Previous Article in Special Issue
Interplay between Vortex Dynamics and Superconducting Gap Structure in Layered Organic Superconductors
Article

Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3

1
Department of Physics, Toho University, Funabashi 274-8510, Chiba, Japan
2
Condensed Molecular Materials Laboratory, RIKEN, Wako 351-0198, Saitama, Japan
3
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Aichi, Japan
4
Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585, Aichi, Japan
*
Author to whom correspondence should be addressed.
Academic Editor: Toshio Naito
Crystals 2021, 11(7), 791; https://doi.org/10.3390/cryst11070791
Received: 17 June 2021 / Revised: 3 July 2021 / Accepted: 4 July 2021 / Published: 7 July 2021
(This article belongs to the Special Issue Organic Conductors)
Field-effect transistors based on strongly correlated insulators are an excellent platform for studying the electronic phase transition and simultaneously developing phase transition transistors. Molecular conductors are suitable for phase transition transistors owing to the high tunability of the electronic states. Molecular Mott transistors show field-induced phase transitions including superconducting transitions. However, their application to charge-ordered insulators is limited. In this study, we fabricated electric double layer transistors based on quarter-filled charge-ordered insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3. We observed ambipolar field effects in both compounds where both electron and hole doping (up to the order of 1013 cm2) reduces the resistance by the band filling shift from the commensurate value. The maximum field-effect mobilities are approximately 10 and 55 cm2/Vs, and the gate-induced conductivities are 0.96 and 3.6 e2/h in α-(BEDT-TTF)2I3 and α-(BETS)2I3, respectively. However, gate-induced metallic conduction does not emerge. The gate voltage dependence of the activation energy in α-(BEDT-TTF)2I3 and the Hall resistance in α-(BETS)2I3 imply that the electric double layer doping in the present experimental setup induces hopping transport rather than band-like two-dimensional transport. View Full-Text
Keywords: organic conductor; charge-ordered insulator; electric double layer transistor; organic field-effect transistor organic conductor; charge-ordered insulator; electric double layer transistor; organic field-effect transistor
Show Figures

Figure 1

MDPI and ACS Style

Kawasugi, Y.; Masuda, H.; Pu, J.; Takenobu, T.; Yamamoto, H.M.; Kato, R.; Tajima, N. Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3. Crystals 2021, 11, 791. https://doi.org/10.3390/cryst11070791

AMA Style

Kawasugi Y, Masuda H, Pu J, Takenobu T, Yamamoto HM, Kato R, Tajima N. Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3. Crystals. 2021; 11(7):791. https://doi.org/10.3390/cryst11070791

Chicago/Turabian Style

Kawasugi, Yoshitaka, Hikaru Masuda, Jiang Pu, Taishi Takenobu, Hiroshi M. Yamamoto, Reizo Kato, and Naoya Tajima. 2021. "Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3" Crystals 11, no. 7: 791. https://doi.org/10.3390/cryst11070791

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop