Order Article Reprints

Choi Y-J, Lee J-H, Choi J-S, An S-J, Hwang Y-M, Roh J-S, Im K-S. Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer. Crystals. 2021; 11(5):489. https://doi.org/10.3390/cryst11050489

Choi, Yeo-Jin, Jae-Hoon Lee, Jin-Seok Choi, Sung-Jin An, Young-Min Hwang, Jae-Seung Roh, and Ki-Sik Im. 2021. "Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer" Crystals 11, no. 5: 489. https://doi.org/10.3390/cryst11050489

Choi, Y.-J., Lee, J.-H., Choi, J.-S., An, S.-J., Hwang, Y.-M., Roh, J.-S., & Im, K.-S. (2021). Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer. Crystals, 11(5), 489. https://doi.org/10.3390/cryst11050489