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Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers
 
 

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Journal: Crystals, 2021
Volume: 11
Number: 1364

Article: InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
Authors: by Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura and Steven P. DenBaars
Link: https://www.mdpi.com/2073-4352/11/11/1364

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