White, R.C.; Li, H.; Khoury, M.; Lynsky, C.; Iza, M.; Keller, S.; Sotta, D.; Nakamura, S.; DenBaars, S.P.
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates. Crystals 2021, 11, 1364.
https://doi.org/10.3390/cryst11111364
AMA Style
White RC, Li H, Khoury M, Lynsky C, Iza M, Keller S, Sotta D, Nakamura S, DenBaars SP.
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates. Crystals. 2021; 11(11):1364.
https://doi.org/10.3390/cryst11111364
Chicago/Turabian Style
White, Ryan C., Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, and Steven P. DenBaars.
2021. "InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates" Crystals 11, no. 11: 1364.
https://doi.org/10.3390/cryst11111364
APA Style
White, R. C., Li, H., Khoury, M., Lynsky, C., Iza, M., Keller, S., Sotta, D., Nakamura, S., & DenBaars, S. P.
(2021). InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates. Crystals, 11(11), 1364.
https://doi.org/10.3390/cryst11111364