Article Versions Notes

Zhang X, Yang W, Xing Z, Qiu H, Gu Y, Bian L, Lu S, Qin H, Cai Y, Suzuki Y, et al. Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy. Crystals. 2021; 11(11):1312. https://doi.org/10.3390/cryst11111312

Zhang, Xue, Wenxian Yang, Zhiwei Xing, Haibing Qiu, Ying Gu, Lifeng Bian, Shulong Lu, Hua Qin, Yong Cai, Yuta Suzuki, and et al. 2021. "Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy" Crystals 11, no. 11: 1312. https://doi.org/10.3390/cryst11111312

Zhang, X., Yang, W., Xing, Z., Qiu, H., Gu, Y., Bian, L., Lu, S., Qin, H., Cai, Y., Suzuki, Y., Kaneko, S., Matsuda, Y., Izumi, S., Nakamura, Y., & Tackeuchi, A. (2021). Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy. Crystals, 11(11), 1312. https://doi.org/10.3390/cryst11111312