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Journal: Crystals, 2021
Volume: 11
Number: 1203
1203
Article:
Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
Authors:
by
Xiaomeng Fan, Shengrui Xu, Hongchang Tao, Ruoshi Peng, Jinjuan Du, Ying Zhao, Jinfeng Zhang, Jincheng Zhang and Yue Hao
Link:
https://www.mdpi.com/2073-4352/11/10/1203
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Cite
Fan, X.; Xu, S.; Tao, H.; Peng, R.; Du, J.; Zhao, Y.; Zhang, J.; Zhang, J.; Hao, Y. Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure. Crystals 2021, 11, 1203. https://doi.org/10.3390/cryst11101203
Fan X, Xu S, Tao H, Peng R, Du J, Zhao Y, Zhang J, Zhang J, Hao Y. Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure. Crystals. 2021; 11(10):1203. https://doi.org/10.3390/cryst11101203
Chicago/Turabian StyleFan, Xiaomeng, Shengrui Xu, Hongchang Tao, Ruoshi Peng, Jinjuan Du, Ying Zhao, Jinfeng Zhang, Jincheng Zhang, and Yue Hao. 2021. "Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure" Crystals 11, no. 10: 1203. https://doi.org/10.3390/cryst11101203
APA StyleFan, X., Xu, S., Tao, H., Peng, R., Du, J., Zhao, Y., Zhang, J., Zhang, J., & Hao, Y. (2021). Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure. Crystals, 11(10), 1203. https://doi.org/10.3390/cryst11101203
