Effect of Doping on the Electrical Characteristics of ZnSe
Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County, 1000 Hilltop Circle, Baltimore, MD 21250, USA
EM31, NASA Marshall Space Flight Center, Huntsville, AL 35812, USA
Author to whom correspondence should be addressed.
Crystals 2020, 10(7), 551; https://doi.org/10.3390/cryst10070551
Received: 14 May 2020 / Revised: 31 May 2020 / Accepted: 23 June 2020 / Published: 27 June 2020
(This article belongs to the Special Issue Charge Density for Physical Properties in Crystals)
The effect of sulfur, iron, and chromium doping on the electrical characteristics of ZnSe single crystals was studied. The crystals, grown by the physical vapor transport method (PVT) at NASA Marshall Space Flight Center, were characterized by measuring electrical resistivity, capacitance, and dielectric constant using LCR meter. The morphology was studied by scanning electron microscopy to determine the crystallinity and micro defects. The measured resistivity and dielectric constant showed tunability as the function of frequency in the range of 100 Hz to 100,000 Hz, indicating the suitability of doped material for tuning devices. Besides, for the range from 50 mV to 1000mV, there was no difference in values for the studied frequency range, indicating no degradation or breakdown in the material. All doped ZnSe crystals with sulfur, iron, and chromium showed a similar trend as the function of frequency. Cr-ZnSe showed very high resistivity and lower dielectric constant compared to S-ZnSe and Fe-ZnSe crystals.