Next Article in Journal
A Complex Assemblage of Crystal Habits of Pyrite in the Volcanic Hot Springs from Kamchatka, Russia: Implications for the Mineral Signature of Life on Mars
Previous Article in Journal
Gold Nanoisland Agglomeration upon the Substrate Assisted Chemical Etching Based on Thermal Annealing Process
Previous Article in Special Issue
Ternary Aluminides of a New Homologous Series—CePt2Al2 and CePt3Al3: Crystal Structures and Thermal Properties
Open AccessArticle

Growth and Magnetism of MnxGe1−x Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy

State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
*
Author to whom correspondence should be addressed.
Maolong Yang and Liming Wang are co-first authors of the article.
Crystals 2020, 10(6), 534; https://doi.org/10.3390/cryst10060534
Received: 3 June 2020 / Revised: 19 June 2020 / Accepted: 21 June 2020 / Published: 23 June 2020
(This article belongs to the Special Issue Intermetallic)
Self-assembled MnGe quantum dots (QDs) were grown on Si (001) substrates using molecular beam epitaxy with different growth temperatures and Ge deposition thicknesses to explore the interaction among Mn doping, Ge deposition, the formation of intermetallics, and the ferromagnetism of QDs. With the introduction of Mn atoms, the QDs become large and the density significantly decreases due to the improvement in the surface migration ability of Ge atoms. The growth temperature is one of the most important factors deciding whether intermetallic phases form between Mn and Ge. We found that Mn atoms can segregate from the Ge matrix when the growth temperature exceeds 550 °C, and the strongest ferromagnetism of QDs occurs at a growth temperature of 450 °C. As the Ge deposition thickness increases, the morphology of QDs changes and the ferromagnetic properties decrease gradually. The results clearly indicate the morphological evolution of MnGe QDs and the formation conditions of intermetallics between Mn and Ge, such as Mn5Ge3 and Mn11Ge8. View Full-Text
Keywords: MnGe; microstructures; ferromagnetic semiconductor; intermetallic MnGe; microstructures; ferromagnetic semiconductor; intermetallic
Show Figures

Figure 1

MDPI and ACS Style

Yang, M.; Wang, L.; You, J.; Meng, L.; Zhang, Y.; Wang, B.; Wang, B.; Hu, H. Growth and Magnetism of MnxGe1−x Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy. Crystals 2020, 10, 534.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop