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Correction published on 10 September 2018, see Micromachines 2018, 9(9), 451.

Open AccessArticle
Micromachines 2018, 9(8), 412; https://doi.org/10.3390/mi9080412

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

1
Department of Biomedical Engineering, University of South Florida, Tampa, FL 33620, USA
2
Department of Bioengineering, University of Texas at Dallas, Dallas, TX 75080, USA
3
Nanotechnology Research and Education Center @ USF, Tampa, FL 33617, USA
4
Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
5
Department of Electrical Engineering, University of South Florida, Tampa, FL 33620, USA
*
Author to whom correspondence should be addressed.
Received: 31 July 2018 / Revised: 11 August 2018 / Accepted: 12 August 2018 / Published: 18 August 2018
(This article belongs to the Special Issue Neural Microelectrodes: Design and Applications)
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Abstract

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices. View Full-Text
Keywords: neural interface; silicon carbide; robust microelectrode neural interface; silicon carbide; robust microelectrode
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Bernardin, E.K.; Frewin, C.L.; Everly, R.; Ul Hassan, J.; Saddow, S.E. Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface. Micromachines 2018, 9, 412.

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