Ngo, H.-D.; Mukhopadhyay, B.; Mackowiak, P.; Kröhnert, K.; Ehrmann, O.; Lang, K.-D.
A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems. Micromachines 2016, 7, 193.
https://doi.org/10.3390/mi7100193
AMA Style
Ngo H-D, Mukhopadhyay B, Mackowiak P, Kröhnert K, Ehrmann O, Lang K-D.
A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems. Micromachines. 2016; 7(10):193.
https://doi.org/10.3390/mi7100193
Chicago/Turabian Style
Ngo, Ha-Duong, Biswajit Mukhopadhyay, Piotr Mackowiak, Kevin Kröhnert, Oswin Ehrmann, and Klaus-Dieter Lang.
2016. "A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems" Micromachines 7, no. 10: 193.
https://doi.org/10.3390/mi7100193
APA Style
Ngo, H.-D., Mukhopadhyay, B., Mackowiak, P., Kröhnert, K., Ehrmann, O., & Lang, K.-D.
(2016). A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems. Micromachines, 7(10), 193.
https://doi.org/10.3390/mi7100193