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Micromachines 2015, 6(9), 1317-1330;

Fabrication of SWCNT-Graphene Field-Effect Transistors

State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China
University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China
Department of Mechanical Engineering, University of Arkansas, 204 Mechanical Engineering Building, Fayetteville, AR 72701, USA
This paper is an extended version of our paper published in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Xi’an, China, 7–11 April 2015.
Authors to whom correspondence should be addressed.
Academic Editors: Ting-Hsuan Chen and Joost Lötters
Received: 4 May 2015 / Revised: 16 August 2015 / Accepted: 3 September 2015 / Published: 8 September 2015
Full-Text   |   PDF [7207 KB, uploaded 8 September 2015]   |  


Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices. View Full-Text
Keywords: graphene; SWCNT; all-carbon; FETs; dielectrophoresis; AFM; interdigitated electrodes graphene; SWCNT; all-carbon; FETs; dielectrophoresis; AFM; interdigitated electrodes

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Xie, S.; Jiao, N.; Tung, S.; Liu, L. Fabrication of SWCNT-Graphene Field-Effect Transistors. Micromachines 2015, 6, 1317-1330.

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