Article Versions Notes

Hsieh C-H, Cheng C-Y, Hsiao Y-K, Wang Z-H, Tu C-C, Chen C-CA, Lee P-T, Kuo H-C. Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers. Micromachines. 2025; 16(6):710. https://doi.org/10.3390/mi16060710

Hsieh, Chi-Hsiang, Chiao-Yang Cheng, Yi-Kai Hsiao, Zi-Hao Wang, Chang-Ching Tu, Chao-Chang Arthur Chen, Po-Tsung Lee, and Hao-Chung Kuo. 2025. "Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers" Micromachines 16, no. 6: 710. https://doi.org/10.3390/mi16060710

Hsieh, C.-H., Cheng, C.-Y., Hsiao, Y.-K., Wang, Z.-H., Tu, C.-C., Chen, C.-C. A., Lee, P.-T., & Kuo, H.-C. (2025). Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers. Micromachines, 16(6), 710. https://doi.org/10.3390/mi16060710