Study on the Motion Trajectory of Abrasives and Surface Improvement Mechanism in Ultrasonic-Assisted Diamond Wire Sawing Monocrystalline Silicon

The surface quality of diamond wire sawing (DWS) wafers directly affects the efficiency and yield of subsequent processing steps. This paper investigates the motion trajectory of abrasives in ultrasonic-assisted diamond wire sawing (UADWS) and its mechanism for improving surface quality. The influence of ultrasonic vibration on the cutting arc length, cutting depth, and interference of multi-abrasive trajectories was analyzed through the establishment of an abrasive motion trajectory model. The ultrasonic vibration transforms the abrasive trajectory from linear to sinusoidal, thereby increasing the cutting arc length while reducing the cutting depth. A lower wire speed was found to be more conducive to exploiting the advantages of ultrasonic vibration. Furthermore, the intersecting interference of multi-abrasive trajectories contributes to enhanced surface quality. Experimental studies were conducted on monocrystalline silicon (mono-Si) to verify the effectiveness of ultrasonic vibration in improving surface morphology and reducing wire marks during the sawing process. The experimental results demonstrate that, compared with DWS, UADWS achieves a significantly lower surface roughness Ra and generates micro-pits. The ultrasonic vibration induces a micro-grinding effect on both peaks and valleys of wire marks, effectively reducing their peak–valley (PV) height. This study provides a theoretical basis for optimizing UADWS process parameters and holds significant implications for improving surface quality in mono-Si wafer slicing.