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Journal: Micromachines, 2025
Volume: 16
Number: 447
Article:
A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Qgd and Ron
Authors:
by
Wenrong Cui, Jianbin Guo, Hang Xu and David Wei Zhang
Link:
https://www.mdpi.com/2072-666X/16/4/447
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