Ren, Y.; Yu, Y.; Zhou, S.; Pang, C.; Li, Y.; Lei, Z.; Zhang, H.; Feng, Z.; Song, X.; Liu, H.;
et al. Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes. Micromachines 2025, 16, 288.
https://doi.org/10.3390/mi16030288
AMA Style
Ren Y, Yu Y, Zhou S, Pang C, Li Y, Lei Z, Zhang H, Feng Z, Song X, Liu H,
et al. Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes. Micromachines. 2025; 16(3):288.
https://doi.org/10.3390/mi16030288
Chicago/Turabian Style
Ren, Yan, Yongtao Yu, Shengze Zhou, Chao Pang, Yinle Li, Zhifeng Lei, Hong Zhang, Zhihong Feng, Xubo Song, Honghui Liu,
and et al. 2025. "Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes" Micromachines 16, no. 3: 288.
https://doi.org/10.3390/mi16030288
APA Style
Ren, Y., Yu, Y., Zhou, S., Pang, C., Li, Y., Lei, Z., Zhang, H., Feng, Z., Song, X., Liu, H., Lou, Y., & Ni, Y.
(2025). Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes. Micromachines, 16(3), 288.
https://doi.org/10.3390/mi16030288
