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Journal: Micromachines, 2025
Volume: 16
Number: 244
244
Article: SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance
Authors: by Zhiyu Wang, Hongshen Wang, Yuanjie Zhou, Qian Liu, Hao Wu, Jian Shen, Juan Luo and Shengdong Hu
Link: https://www.mdpi.com/2072-666X/16/3/244

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