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Journal: Micromachines, 2025
Volume: 16
Number: 244
Article:
SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance
Authors:
by
Zhiyu Wang, Hongshen Wang, Yuanjie Zhou, Qian Liu, Hao Wu, Jian Shen, Juan Luo and Shengdong Hu
Link:
https://www.mdpi.com/2072-666X/16/3/244
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