Wang, Z.; Wang, H.; Zhou, Y.; Liu, Q.; Wu, H.; Shen, J.; Luo, J.; Hu, S.
SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance. Micromachines 2025, 16, 244.
https://doi.org/10.3390/mi16030244
AMA Style
Wang Z, Wang H, Zhou Y, Liu Q, Wu H, Shen J, Luo J, Hu S.
SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance. Micromachines. 2025; 16(3):244.
https://doi.org/10.3390/mi16030244
Chicago/Turabian Style
Wang, Zhiyu, Hongshen Wang, Yuanjie Zhou, Qian Liu, Hao Wu, Jian Shen, Juan Luo, and Shengdong Hu.
2025. "SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance" Micromachines 16, no. 3: 244.
https://doi.org/10.3390/mi16030244
APA Style
Wang, Z., Wang, H., Zhou, Y., Liu, Q., Wu, H., Shen, J., Luo, J., & Hu, S.
(2025). SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance. Micromachines, 16(3), 244.
https://doi.org/10.3390/mi16030244
