Zhao, Z.; Yu, Q.; Lu, Y.; Yi, C.; Liu, X.; Feng, T.; Zhao, W.; Chen, Y.; Yang, L.; Ma, X.;
et al. High-Precision Small-Signal Model for Double-Channel–High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect. Micromachines 2025, 16, 200.
https://doi.org/10.3390/mi16020200
AMA Style
Zhao Z, Yu Q, Lu Y, Yi C, Liu X, Feng T, Zhao W, Chen Y, Yang L, Ma X,
et al. High-Precision Small-Signal Model for Double-Channel–High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect. Micromachines. 2025; 16(2):200.
https://doi.org/10.3390/mi16020200
Chicago/Turabian Style
Zhao, Ziyue, Qian Yu, Yang Lu, Chupeng Yi, Xin Liu, Ting Feng, Wei Zhao, Yilin Chen, Ling Yang, Xiaohua Ma,
and et al. 2025. "High-Precision Small-Signal Model for Double-Channel–High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect" Micromachines 16, no. 2: 200.
https://doi.org/10.3390/mi16020200
APA Style
Zhao, Z., Yu, Q., Lu, Y., Yi, C., Liu, X., Feng, T., Zhao, W., Chen, Y., Yang, L., Ma, X., & Hao, Y.
(2025). High-Precision Small-Signal Model for Double-Channel–High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect. Micromachines, 16(2), 200.
https://doi.org/10.3390/mi16020200
