Order Article Reprints

Cheng Q, Yang M, Gao Z, Wang R, He J, Yan F, Tang X, Zhang W, Hu Z, Mu J. Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. Micromachines. 2025; 16(10):1093. https://doi.org/10.3390/mi16101093

Cheng, Qianding, Ming Yang, Zhiliang Gao, Ruojue Wang, Jihao He, Feng Yan, Xu Tang, Weihong Zhang, Zijun Hu, and Jingguo Mu. 2025. "Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor" Micromachines 16, no. 10: 1093. https://doi.org/10.3390/mi16101093

Cheng, Q., Yang, M., Gao, Z., Wang, R., He, J., Yan, F., Tang, X., Zhang, W., Hu, Z., & Mu, J. (2025). Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. Micromachines, 16(10), 1093. https://doi.org/10.3390/mi16101093