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Journal: Micromachines, 2025
Volume: 16
Number: 33

Article: Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments
Authors: by Khalil Tamersit, Abdellah Kouzou, José Rodriguez and Mohamed Abdelrahem
Link: https://www.mdpi.com/2072-666X/16/1/33

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